cgb 241 datasheet description: the CGB241 gaas power amplifier mmic has been especially developed for wireless applications in the 2.4 - 2.5 ghz ism band (e.g. bluetooth class 1, or ieee 802.11b). its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. the device delivers 22.5 dbm output power at a supply voltage of 3.2 v, with an overall pae of 50%. the output power can be adjusted using an analog control voltage ( v ctr ). simple external input-, interstage-, and output matching circuits are used to adapt to the different r equirements of linearity and harmonic suppression in various applications features: ? 2-stage bluetooth ingap hbt power amplifier ? single voltage supply ? wide operating voltage range 2.0 - 5.5 v ? p out = 22.5 dbm at v c = 3.2 v ? overall power added efficiency ( pae ) typically 50% ? analog power control with four power steps ? high pae at low?power mode ? high harmonic suppression typ. 35 dbc ? easy external matching concept ? thin small leadless package ( a = 2.6mm 2 ) . applications: ? bluetooth class 1 ? home rf ? cordless phones ? ieee 802.11b ? ism-band spread spectrum package outline: 2-stage bluetooth & wlan ingap hbt power amplifier pin configuration: 1: vc1 2: rfin 3: nc 4: vcntrl1 5: vcntrl2 6: vc2 7 (p addle ) : gnd f o r further information please visit w w w .triquint.com pg. 1/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet absolute maximum ratings p a r a m e t e r s y m b o l l i m i t v a l u e s u n i t m i n . m a x . max. supply voltage v cc, max 0 5 . 5 v max. control voltage v ctr, max 0 3 . 2 v max. current stage 1 i c1, m ax 0 4 0 m a max. current stage 2 i c2, m ax 0 1 6 0 m a max. total power dissipation 1 ) p tot 0 . 5 w max. rf input power 2 ) p in ,m ax + 1 0 d b m channel temperature 1 ) t ch 1 5 0 c storage temperature t stg - 55 150 c 1 ) thermal resistance between junction and pad 7 ( = heatsink ): r t hch = 100 k/w. 2 ) no rf input signal should be applied at turn on of dc power. an output vswr of 1:1 is assumed. ty pical electrical characteristi cs in CGB241 reference design t a = 25 c; v cc = 3.2 v; f = 2.4 ... 2.5 ghz; z in = z out = 50 ohms parameter sy mbol limit values unit test conditions m i n ty p m a x supply current small-signal operation i cc,ss 1 2 0 1 5 0 m a p in = - 10 dbm v ct r = 2.5 v power gain small-signal operation g ss 2 4 2 6 d b p in = - 10 dbm v ct r = 2.5 v output power power step 1 p out , 1 3 d b m p in = + 3 db m v ct r = 1.15 v supply current power step 1 i cc,1 1 5 m a p in = + 3 db m v ct r = 1.15 v power added efficiency power step 1 pae 1 7 % p in = + 3 db m v ct r = 1.15 v output power power step 2 p out , 2 1 2 d b m p in = + 3 db m v ct r = 1.3 v supply current power step 2 i cc,2 3 0 m a p in = + 3 db m v ct r = 1.3 v power added efficiency power step 2 pae 2 1 5 % p in = + 3 db m v ct r = 1.3 v f o r further information please visit w w w .triquint.com pg. 2/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet electrical characteristics in cg b241 reference design (cont.) parameter sy mbol limit values unit test conditions m i n ty p m a x output power power step 3 p out , 3 1 7 d b m p in = + 3 db m v ct r = 1.5 v supply current power step 3 i cc,3 5 2 m a p in = + 3 db m v ct r = 1.5 v power added efficiency power step 3 pae 3 3 0 % p in = + 3 db m v ct r = 1.5 v output power power step 4 p out , 4 2 2 . 0 2 2 . 5 d b m p in = + 3 db m v ct r = 2.5 v supply current power step 4 i cc,4 1 3 0 m a p in = + 3 db m v ct r = 2.5 v power added efficiency power step 4 pae 4 4 0 5 0 - % p in = + 3 db m v ct r = 2.5 v 2 nd harm. suppression power step 4 h 2 - 3 5 d b c p in = + 3 db m v ct r = 2.5 v turn-off current i cc,off 1 u a v cc = 3.2 v v ct r < 0.4 v no rf input off-state isolation s 21,0 2 6 d b p in = + 3 db m v ct r = 0 v stable load vswr (no oscillation for any phase of load) vswr 6 p in = + 3 db m v cc = 3.2 v v ct r = 2.5 v z in = 50 ohms maximum load vswr (no damage to device) allowed for 10s rf must not be applied before dc is turned on ! vswr 6 p in = + 5 db m v cc = 4.8 v v ct r = 2.5 v z in = 50 ohms f o r further information please visit w w w .triquint.com pg. 3/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet f o r further information please visit w w w .triquint.com ty pical device performance pae versus vcc pout versus vcc vcntrl: 2.5v; pin: +3dbm @ 2.45ghz vcntrl: 2.5v; pin: +3dbm @ 2.45ghz 20 25 30 35 40 45 50 55 22 . 5 33 . 5 44 . 5 5 vc c ( v ) pae (% ) 19 21 23 25 27 22 . 5 33 . 5 4 4 . 5 5 vc c ( v ) pout (dbm) pg. 4/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet f o r further information please visit w w w .triquint.com supply current i cc = f ( v ctr ) output pow e r p out = f ( v ctr ) ic c v s v c t r l p i n: 2 . 4 5 g h z / + 3 db m 0 20 40 60 80 100 120 140 160 180 1 1 .5 2 2 .5 3 v c tr l (v ) icc (ma) v cc : 2 . 8 v v cc : 3 . 2 v po u t v s vc t r l pi n : 2 . 4 5 g h z / +3 d b m 0 5 10 15 20 25 1 1 .5 2 2 .5 3 vc t r l( v) pout (dbm) v c c :2 . 8 v v c c :3 .2 v output pow e r compression p out = f ( p in ) po u t v s pin v c t r l: 2 . 5 v , f ( in ) : 2 .4 5 g h z 5.0 10.0 15.0 20.0 25.0 -2 0 - 1 5 -1 0 - 5 0 5 pi n ( d b m ) pout (dbm) v cc : 3 . 2 v v cc : 2 . 8 v pg. 5/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet pinning figure 1 CGB241 outline: slim-7 package p a d s y m b o l f u n c t i o n 1 v c1 supply voltage of 1 st stage / interstage match 2 r f in r f i n p u t 3 n c no connection; it is recommended to ground this pad as short as possible e.g. by a via under the pad. 4 v ctr1 control voltage 1 st stage 5 v ctr2 control voltage 2 nd stage 6 v c2 supply voltage of 2 nd stage / rf output 7 gnd rf and dc ground (pad located on backside of package) heatsink. thermal resistance between junction ? pad 7: r thch = 100 k/w. functional diagram (2 ) rfin ( 1 ) vc1 (6 ) vc2 (7 ) gn d (4 ) vctr1 (5 ) vctr2 figure 2 CGB241 functional diagram f o r further information please visit w w w .triquint.com pg. 6/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet application note 1: CGB241 reference design rf in rf out vcc c1 c4 c5 tr l1 trl2 CGB241 l1 tr l 3 r1 c7 c6 c3 c2 1 34 5 2 6 vctr 7 figure 3 schematic of CGB241 reference design. p a r t t y p e v a l u e o u t l i n e s o u r c e part n o . c1 cer. capacitor 22 pf 0402 murata cog c2 cer. capacitor 22 pf 0402 murata cog c3 4 ) cer. capacitor 1.5 pf 0603 avx accu-p 06035j1r5bbt c4 cer. capacitor 2.2 pf 0402 murata cog c5 cer. capacitor 10 pf 0402 murata cog c6 cer. capacitor 1 f 0603 murata x7r c7 cer. capacitor 1 nf 0402 murata x7r l 1 i n d u c t o r 2 2 n h 0 6 0 3 t o k o l l 1 6 0 8 ? f s r 1 r e s i s t o r 1 0 ? 0 4 0 2 m i r a t r l 1 m i c r o s t r i p l i n e fr4 substrate; h = 0,2 mm; w = 0,32 mm t r l 2 m i c r o s t r i p l i n e fr4 substrate; h = 0,2 mm; w = 0,32 mm t r l 3 m i c r o s t r i p l i n e fr4 substrate; h = 0,2 mm; w = 0,32 mm 4 ) cost optimization might take place by usi ng lower-q avx-cu capacitors instead of the accup version. this will lead to better h 2 performance, however resulting in a loss of about 2% pae. line length l is the total distance from the corner of t uning capacitor to the corner of mmic?s package. length of bend structures measured in t he middle of the corresponding conductor. f o r further information please visit w w w .triquint.com pg. 7/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet f o r further information please visit w w w .triquint.com triquint semiconductor, inc. r 1 c5 c6 l 1 c 3 c2 cgb 241 c1 c 4 c7 ?white dots? = ground vias rf out rf in (sma) (sma) figure 4 lay out of CGB241 reference design. notes: vc1 and vc2 are connected together on the pcb. vctr1 and vctr2 are connect ed together on the pcb. pg. 8/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet package outline of slim-7 package f o r further information please visit w w w .triquint.com pg. 9/10 preliminary , rev. 1. 4 december 12th, 2003
CGB241 datasheet additional information for latest specifications, additional product information, wo rldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: (503) 615-9000 email: info_wireless@tq s.com fax: (503) 615-8902 for technical questions and additional in formation on specific applications: email: info_wireless@tqs.com the information provided herein is believed to be reliable; triquint assumes no liability for inaccuracies or omissions. triqui nt assumes no responsibility for t he use of t h is inf o rmat ion, and all such inf o rmat ion shall be ent irely at t he user's own risk. prices and specif icat ions are s ubject t o change wit hout not ice. no pat ent right s or licenses t o any of t he circuit s descr ibed herein are implied or gr ant ed t o any t h ird part y . tr iquint does not aut hor ize or war r ant any tr iquint pr oduct f o r use in lif e- suppor t devices and/ or syst ems. copyright ? 2003 triquint semiconduct o r, i n c. all right s reserved. revision 1. 4- , d ecember 12t h, 2003 for additional information and lates t s pec ific ations , s ee our webs ite: www.triquint.com pg. 10 /10 part marking: white ink or laser mark; xxxx = last 4 digits of lot code. ordering information: ty p e m a r k i n g o r d e r i n g c o d e p a c k a g e c g b 2 4 1 x x x x t . b . d . s l i m - 7 esd : e lectro s tatic d ischarge sensitive device observe handling precautions!
|
